Part Details for IRF830 by STMicroelectronics
Overview of IRF830 by STMicroelectronics
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRF830
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 3 | 99 |
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$1.0969 / $1.7550 | Buy Now |
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Bristol Electronics | 17 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 7 |
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$0.6000 / $0.7200 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 13 |
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$0.9520 / $1.1900 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 79 |
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$0.8775 / $2.3400 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 28 |
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$1.2500 / $1.9200 | Buy Now |
Part Details for IRF830
IRF830 CAD Models
IRF830 Part Data Attributes:
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IRF830
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
IRF830
STMicroelectronics
4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | STMicroelectronics | |
| Additional Feature | HIGH VOLTAGE, FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 4.5 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 55 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 100 W | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 205 ns | |
| Turn-on Time-Max (ton) | 102 ns |
Alternate Parts for IRF830
This table gives cross-reference parts and alternative options found for IRF830. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF830, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF830 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Vishay Intertechnologies | IRF830 vs IRF830 |
| IRF830 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | Microsemi Corporation | IRF830 vs IRF830 |
| IRF830 | 4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | onsemi | IRF830 vs IRF830 |
| IRF830PBF | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IRF830 vs IRF830PBF |
| IRF830 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF830 vs IRF830 |
| IRF830 | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Vishay Siliconix | IRF830 vs IRF830 |
| IRF830 | TRANSISTOR 4.5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | IRF830 vs IRF830 |