IRF830 vs UF830G-TA3-T feature comparison

IRF830 STMicroelectronics

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UF830G-TA3-T Unisonic Technologies Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer STMICROELECTRONICS UNISONIC TECHNOLOGIES CO LTD
Part Package Code TO-220AB TO-220AB
Package Description TO-220, 3 PIN FLANGE MOUNT, R-PSFM-T3
Pin Count 3 3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer STMicroelectronics
Additional Feature HIGH VOLTAGE, FAST SWITCHING
Avalanche Energy Rating (Eas) 290 mJ 300 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 4.5 A 4.5 A
Drain-source On Resistance-Max 1.5 Ω 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 55 pF
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 100 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 18 A 18 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 205 ns
Turn-on Time-Max (ton) 102 ns
Base Number Matches 2 1
Case Connection DRAIN
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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