IRF830 vs IRF830 feature comparison

IRF830 STMicroelectronics

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IRF830 Vishay Siliconix

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer STMICROELECTRONICS VISHAY SILICONIX
Part Package Code TO-220AB TO-220AB
Package Description TO-220, 3 PIN TO-220, 3 PIN
Pin Count 3 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer STMicroelectronics Vishay
Additional Feature HIGH VOLTAGE, FAST SWITCHING AVALANCHE RATED
Avalanche Energy Rating (Eas) 290 mJ 280 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 4.5 A 4.5 A
Drain-source On Resistance-Max 1.5 Ω 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 55 pF
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 100 W
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 18 A 18 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 205 ns
Turn-on Time-Max (ton) 102 ns
Base Number Matches 2 10
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C

Compare IRF830 with alternatives

Compare IRF830 with alternatives