Part Details for IRF720 by International Rectifier
Overview of IRF720 by International Rectifier
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF720
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 610 |
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RFQ | ||
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Bristol Electronics | Min Qty: 3 | 154 |
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$1.1212 / $2.4024 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220VAR | 253 |
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$0.3500 / $0.7500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220VAR | 160 |
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$0.4000 / $0.8000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220VAR | 64 |
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$0.7500 / $1.2500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220VAR | 88 |
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$1.3860 / $2.5200 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220VAR | 31 |
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$1.6088 / $3.2175 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220VAR | 219 |
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$0.5500 / $1.1000 | Buy Now |
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NexGen Digital | 21 |
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RFQ | ||
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Component Electronics, Inc | IN STOCK SHIP TODAY | 17 |
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$1.5000 / $2.3100 | Buy Now |
Part Details for IRF720
IRF720 CAD Models
IRF720 Part Data Attributes:
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IRF720
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF720
International Rectifier
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 3.3 A | |
| Drain-source On Resistance-Max | 1.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 50 W | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 13 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF720
This table gives cross-reference parts and alternative options found for IRF720. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF720, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF720-010 | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF720 vs IRF720-010 |
| IRF720 | 3.3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF720 vs IRF720 |
| BUZ76 | Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Siemens | IRF720 vs BUZ76 |
| IRF720-009 | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF720 vs IRF720-009 |
| IRF720-001 | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF720 vs IRF720-001 |
| IRF720 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | IRF720 vs IRF720 |
| IRF720-006 | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF720 vs IRF720-006 |
| BUZ76 | 3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | IRF720 vs BUZ76 |
| RFP4N40 | 4A, 400V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF720 vs RFP4N40 |
| IRF720 | Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF720 vs IRF720 |