Datasheets
MTP2N25 by:

2A, 250V, 2.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for MTP2N25 by Motorola Mobility LLC

Overview of MTP2N25 by Motorola Mobility LLC

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for MTP2N25

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MTP2N25 Part Data Attributes

MTP2N25 Motorola Mobility LLC
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MTP2N25 Motorola Mobility LLC 2A, 250V, 2.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 2.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 65 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 50 W
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 65 ns
Turn-on Time-Max (ton) 45 ns

Alternate Parts for MTP2N25

This table gives cross-reference parts and alternative options found for MTP2N25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP2N25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF723 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor MTP2N25 vs IRF723
IRF722 2.5A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC MTP2N25 vs IRF722
IRF722PBF 2.8A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Infineon Technologies AG MTP2N25 vs IRF722PBF
IRF722 Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor MTP2N25 vs IRF722
BUZ60B 4.5A, 400V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited MTP2N25 vs BUZ60B
IRF723 2.8A, 350V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited MTP2N25 vs IRF723
IRF723 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor MTP2N25 vs IRF723
IRF723-006 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MTP2N25 vs IRF723-006
BUK454-400B TRANSISTOR 4.2 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors MTP2N25 vs BUK454-400B
IRF722 2.8A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited MTP2N25 vs IRF722
Part Number Description Manufacturer Compare
UFN720 Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Unitrode Corp (RETIRED) MTP2N25 vs UFN720
IRF720-006 Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier MTP2N25 vs IRF720-006
BUZ76 Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors MTP2N25 vs BUZ76
BUZ76 Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor MTP2N25 vs BUZ76
IRF723 2.8A, 350V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC MTP2N25 vs IRF723
IRF722 Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors MTP2N25 vs IRF722
BUZ76 2.6A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited MTP2N25 vs BUZ76
MTP4N40E 4A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN onsemi MTP2N25 vs MTP4N40E
IRF723-001 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MTP2N25 vs IRF723-001
IRF723 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor MTP2N25 vs IRF723

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