Datasheets
BUZ60B by:

4.5A, 400V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET

Part Details for BUZ60B by TT Electronics Power and Hybrid / Semelab Limited

Overview of BUZ60B by TT Electronics Power and Hybrid / Semelab Limited

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Part Details for BUZ60B

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BUZ60B Part Data Attributes

BUZ60B TT Electronics Power and Hybrid / Semelab Limited
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BUZ60B TT Electronics Power and Hybrid / Semelab Limited 4.5A, 400V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SEMELAB LTD
Package Description FLANGE MOUNT, R-MSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 1.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-MSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for BUZ60B

This table gives cross-reference parts and alternative options found for BUZ60B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ60B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF723 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor BUZ60B vs IRF723
IRF722 2.5A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC BUZ60B vs IRF722
IRF722PBF 2.8A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Infineon Technologies AG BUZ60B vs IRF722PBF
IRF722 Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor BUZ60B vs IRF722
IRF723 2.8A, 350V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited BUZ60B vs IRF723
IRF723 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor BUZ60B vs IRF723
IRF723-006 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier BUZ60B vs IRF723-006
BUK454-400B TRANSISTOR 4.2 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors BUZ60B vs BUK454-400B
IRF722 2.8A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited BUZ60B vs IRF722
BUZ76 Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors BUZ60B vs BUZ76
Part Number Description Manufacturer Compare
UFN720 Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Unitrode Corp (RETIRED) BUZ60B vs UFN720
IRF720-006 Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier BUZ60B vs IRF720-006
BUZ76 Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors BUZ60B vs BUZ76
BUZ76 Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor BUZ60B vs BUZ76
IRF723 2.8A, 350V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC BUZ60B vs IRF723
IRF722 Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors BUZ60B vs IRF722
BUZ76 2.6A, 400V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited BUZ60B vs BUZ76
MTP4N40E 4A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN onsemi BUZ60B vs MTP4N40E
IRF723-001 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier BUZ60B vs IRF723-001
IRF723 Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor BUZ60B vs IRF723

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