Part Details for IRF540NSTRLHR by International Rectifier
Overview of IRF540NSTRLHR by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF540NSTRLHR
IRF540NSTRLHR CAD Models
IRF540NSTRLHR Part Data Attributes
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IRF540NSTRLHR
International Rectifier
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Datasheet
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IRF540NSTRLHR
International Rectifier
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 185 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 33 A | |
Drain-source On Resistance-Max | 0.044 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF540NSTRLHR
This table gives cross-reference parts and alternative options found for IRF540NSTRLHR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NSTRLHR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPD30N10S3L34ATMA1 | Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | IRF540NSTRLHR vs IPD30N10S3L34ATMA1 |
IRF540NSHR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2 | International Rectifier | IRF540NSTRLHR vs IRF540NSHR |
IRF540NL | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IRF540NSTRLHR vs IRF540NL |
HUF75631S3S | 33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | IRF540NSTRLHR vs HUF75631S3S |
934055808127 | TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | NXP Semiconductors | IRF540NSTRLHR vs 934055808127 |
NTE2930 | Power Field-Effect Transistor, 31A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | NTE Electronics Inc | IRF540NSTRLHR vs NTE2930 |
2SK3647-01 | Power Field-Effect Transistor, 30A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TFP, 4 PIN | Fuji Electric Co Ltd | IRF540NSTRLHR vs 2SK3647-01 |
IPD30N10S3L-34 | Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | IRF540NSTRLHR vs IPD30N10S3L-34 |