Datasheets
NTE2930 by: NTE Electronics Inc

Power Field-Effect Transistor, 31A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for NTE2930 by NTE Electronics Inc

Overview of NTE2930 by NTE Electronics Inc

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Applications Automotive

Price & Stock for NTE2930

Part # Distributor Description Stock Price Buy
DISTI # 2368-NTE2930-ND
DigiKey MOSFET N-CHANNEL 100V 31A TO3PML Min Qty: 1 Lead time: 1 Weeks Container: Bag MARKETPLACE PRODUCT 363
In Stock
  • 1 $8.7900
  • 10 $8.3500
  • 20 $7.9100
  • 50 $7.4700
  • 100 $7.3000
$7.3000 / $8.7900 Buy Now
DISTI # NTE2930
TME Transistor: N-MOSFET, unipolar, 100V, 21.9A, Idm: 170A, 100W, TO3PML Min Qty: 1 0
  • 1 $9.4100
  • 3 $8.4700
  • 10 $7.4800
  • 25 $6.7200
$6.7200 / $9.4100 RFQ

Part Details for NTE2930

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NTE2930 Part Data Attributes:

NTE2930 NTE Electronics Inc
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NTE2930 NTE Electronics Inc Power Field-Effect Transistor, 31A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Part Life Cycle Code Active
Ihs Manufacturer NTE ELECTRONICS INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 641 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 170 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for NTE2930

This table gives cross-reference parts and alternative options found for NTE2930. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NTE2930, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2SK3647-01 Power Field-Effect Transistor, 30A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TFP, 4 PIN Fuji Electric Co Ltd NTE2930 vs 2SK3647-01
934055808127 TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power NXP Semiconductors NTE2930 vs 934055808127
HUF75631S3S 33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation NTE2930 vs HUF75631S3S
IRF540NSHR Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2 International Rectifier NTE2930 vs IRF540NSHR

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