Part Details for IRF540N by International Rectifier
Overview of IRF540N by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF540N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 30 |
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RFQ | ||
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Bristol Electronics | 301 |
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RFQ | ||
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Bristol Electronics | 36 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 36 |
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$1.7500 / $2.8000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 24 |
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$2.8800 / $4.3200 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | Europe - 50 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 101 |
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RFQ | |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 184 |
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$2.5000 / $3.8500 | Buy Now |
Part Details for IRF540N
IRF540N CAD Models
IRF540N Part Data Attributes
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IRF540N
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF540N
International Rectifier
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220AB, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 185 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 94 W | |
| Power Dissipation-Max (Abs) | 94 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF540N
This table gives cross-reference parts and alternative options found for IRF540N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF512 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF540N vs IRF512 |
| IRF540N | Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRF540N vs IRF540N |
| IRF540NPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRF540N vs IRF540NPBF |
| IRF540NPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF540N vs IRF540NPBF |
| IRF512-009 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF540N vs IRF512-009 |
| IRF512 | 4.9A, 100V, 0.74ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF540N vs IRF512 |
| IRF512 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF540N vs IRF512 |
| RFP2N10 | Power Field-Effect Transistor, 2A I(D), 100V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRF540N vs RFP2N10 |
| IRF540N | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF540N vs IRF540N |
| IRF512-006 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF540N vs IRF512-006 |