Part Details for SUP90N08-8M2P-E3 by Vishay Siliconix
Overview of SUP90N08-8M2P-E3 by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SUP90N08-8M2P-E3
Part # | Distributor | Description | Stock | Price | Buy | |
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ES Components | SIL SUP90N08-8M2P-E3 Engineering Samples BARE DIE | 50 in Stock |
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RFQ |
Part Details for SUP90N08-8M2P-E3
SUP90N08-8M2P-E3 CAD Models
SUP90N08-8M2P-E3 Part Data Attributes:
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SUP90N08-8M2P-E3
Vishay Siliconix
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Datasheet
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SUP90N08-8M2P-E3
Vishay Siliconix
TRANSISTOR 90 A, 75 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 125 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 90 A | |
Drain-source On Resistance-Max | 0.014 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SUP90N08-8M2P-E3
This table gives cross-reference parts and alternative options found for SUP90N08-8M2P-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SUP90N08-8M2P-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF2807PBF | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | SUP90N08-8M2P-E3 vs IRF2807PBF |
IRF513-001 | Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | SUP90N08-8M2P-E3 vs IRF513-001 |
IRF512-006 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | SUP90N08-8M2P-E3 vs IRF512-006 |
IRF511-001 | Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | SUP90N08-8M2P-E3 vs IRF511-001 |
IRF512 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | SUP90N08-8M2P-E3 vs IRF512 |
IRF540N | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | SUP90N08-8M2P-E3 vs IRF540N |
IRF540N | 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | SUP90N08-8M2P-E3 vs IRF540N |
IRF512 | 4.9A, 100V, 0.74ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | SUP90N08-8M2P-E3 vs IRF512 |
IRF2807 | Power Field-Effect Transistor, 82A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | SUP90N08-8M2P-E3 vs IRF2807 |
IRF512-009 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | SUP90N08-8M2P-E3 vs IRF512-009 |