Datasheets
IRF5305L by: International Rectifier

Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN

Part Details for IRF5305L by International Rectifier

Overview of IRF5305L by International Rectifier

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Part Details for IRF5305L

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IRF5305L Part Data Attributes:

IRF5305L International Rectifier
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IRF5305L International Rectifier Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
Part Package Code TO-262AA
Package Description TO-262, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 280 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF5305L

This table gives cross-reference parts and alternative options found for IRF5305L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5305L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF5305LPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier IRF5305L vs IRF5305LPBF
Part Number Description Manufacturer Compare
2SJ652 Power Field-Effect Transistor, 28A I(D), 60V, 0.0555ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, FULL PACK-3 SANYO Semiconductor Co Ltd IRF5305L vs 2SJ652
MTP23P06VG 23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN Rochester Electronics LLC IRF5305L vs MTP23P06VG
2SJ504 20A, 60V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FM, 3 PIN Renesas Electronics Corporation IRF5305L vs 2SJ504
2SJ553(L) Power Field-Effect Transistor, 30A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 Hitachi Ltd IRF5305L vs 2SJ553(L)
2SJ504 Power Field-Effect Transistor, 0.095ohm, P-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN Hitachi Ltd IRF5305L vs 2SJ504
MTP30P06V 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF5305L vs MTP30P06V
2SJ218 0.06ohm, POWER, FET, TO-3PFM, 3 PIN Renesas Electronics Corporation IRF5305L vs 2SJ218
IRF9541 19A, 80V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF5305L vs IRF9541
SFP9510 3.6A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC IRF5305L vs SFP9510
2SJ553(L) 30A, 60V, 0.055ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-3 Renesas Electronics Corporation IRF5305L vs 2SJ553(L)

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