Datasheets
IRF5305 by:

Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for IRF5305 by International Rectifier

Overview of IRF5305 by International Rectifier

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Price & Stock for IRF5305

Part # Distributor Description Stock Price Buy
Bristol Electronics   172
RFQ
Bristol Electronics   504
RFQ
Bristol Electronics   40
RFQ
Quest Components MOSFET Transistor, P-Channel, TO-220AB 80
  • 1 $2.5200
  • 14 $1.5750
  • 49 $1.3860
$1.3860 / $2.5200 Buy Now
Quest Components MOSFET Transistor, P-Channel, TO-220AB 16
  • 1 $2.5200
  • 3 $1.8900
  • 14 $1.5750
$1.5750 / $2.5200 Buy Now
Chip 1 Exchange INSTOCK 50
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 7
  • 1 $1.5400
  • 100 $1.1500
  • 1,000 $1.0000
$1.0000 / $1.5400 Buy Now
Win Source Electronics Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A) 119800
  • 115 $0.4380
  • 280 $0.3600
  • 430 $0.3490
  • 595 $0.3370
  • 770 $0.3260
  • 1,030 $0.2920
$0.2920 / $0.4380 Buy Now

Part Details for IRF5305

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IRF5305 Part Data Attributes:

IRF5305 International Rectifier
Buy Now Datasheet
Compare Parts:
IRF5305 International Rectifier Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-220AB
Package Description TO-220AB, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 280 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 225
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRF5305

This table gives cross-reference parts and alternative options found for IRF5305. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5305, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG IRF5305 vs IRF5305
IRF5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG IRF5305 vs IRF5305PBF
Part Number Description Manufacturer Compare
2SJ652 Power Field-Effect Transistor, 28A I(D), 60V, 0.0555ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220ML, FULL PACK-3 SANYO Semiconductor Co Ltd IRF5305 vs 2SJ652
MTP23P06VG 23A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, LEAD FREE, CASE 221A-09, 3 PIN Rochester Electronics LLC IRF5305 vs MTP23P06VG
2SJ504 20A, 60V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FM, 3 PIN Renesas Electronics Corporation IRF5305 vs 2SJ504
2SJ553(L) Power Field-Effect Transistor, 30A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 Hitachi Ltd IRF5305 vs 2SJ553(L)
2SJ504 Power Field-Effect Transistor, 0.095ohm, P-Channel, Metal-oxide Semiconductor FET, TO-220FM, 3 PIN Hitachi Ltd IRF5305 vs 2SJ504
MTP30P06V 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF5305 vs MTP30P06V
2SJ218 0.06ohm, POWER, FET, TO-3PFM, 3 PIN Renesas Electronics Corporation IRF5305 vs 2SJ218
IRF9541 19A, 80V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF5305 vs IRF9541
SFP9510 3.6A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC IRF5305 vs SFP9510
2SJ553(L) 30A, 60V, 0.055ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-3 Renesas Electronics Corporation IRF5305 vs 2SJ553(L)

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