Part Details for IRF510 by International Rectifier
Overview of IRF510 by International Rectifier
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF510
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 1 | 73 |
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$5.4844 / $8.7750 | Buy Now |
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Bristol Electronics | 68 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 51 |
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$0.8640 / $1.4400 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 60 |
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$0.5075 / $1.0150 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 7 |
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$0.9600 / $1.2000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 105 |
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$1.2000 / $2.4000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 66 |
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$1.2000 / $2.4000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 200 |
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$0.7350 / $2.4500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 15 |
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$8.7750 / $11.7000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 80 |
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$0.6600 / $1.1000 | Buy Now |
Part Details for IRF510
IRF510 CAD Models
IRF510 Part Data Attributes:
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IRF510
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRF510
International Rectifier
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 5.6 A | |
| Drain-source On Resistance-Max | 0.54 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 43 W | |
| Power Dissipation-Max (Abs) | 20 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF510
This table gives cross-reference parts and alternative options found for IRF510. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF510, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF510-006 | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF510 vs IRF510-006 |
| IRF512 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF510 vs IRF512 |
| IRF510 | 5.6A, 100V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | IRF510 vs IRF510 |
| IRF510PBF | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRF510 vs IRF510PBF |
| IRF510PBF | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | IRF510 vs IRF510PBF |
| IRF510 | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRF510 vs IRF510 |
| IRF510-010 | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | IRF510 vs IRF510-010 |
| IRF540N | 33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRF510 vs IRF540N |