Vishay Intertechnologies |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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International Rectifier |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$0.6300 / $2.2330
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New Jersey Semiconductor Products, Inc. |
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$0.5346 / $1.6200
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Vishay Siliconix |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
$0.2625 / $1.5000
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Motorola Semiconductor Products |
Power Field-Effect Transistor, 2.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Samsung Semiconductor |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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Harris Semiconductor |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$0.2940 / $0.6300
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New Jersey Semiconductor Products Inc |
Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB |
$0.5940 / $2.1600
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Intersil Corporation |
3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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General Electric Solid State |
Transistor |
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Advanced Microelectronic Products Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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Rochester Electronics LLC |
3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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Microsemi Corporation |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 |
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Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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FCI Semiconductor |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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Freescale Semiconductor |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,3.3A I(D),TO-220AB |
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Motorola Mobility LLC |
2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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Texas Instruments |
IRF610 |
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onsemi |
IRF610 |
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Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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National Semiconductor Corporation |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,3.3A I(D),TO-220AB |
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