Datasheets
RFP2N08 by:

2A, 80V, 1.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for RFP2N08 by Rochester Electronics LLC

Overview of RFP2N08 by Rochester Electronics LLC

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Part Details for RFP2N08

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RFP2N08 Part Data Attributes

RFP2N08 Rochester Electronics LLC
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RFP2N08 Rochester Electronics LLC 2A, 80V, 1.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 2 A
Drain-source On Resistance-Max 1.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Moisture Sensitivity Level NOT SPECIFIED
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 5 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFP2N08

This table gives cross-reference parts and alternative options found for RFP2N08. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP2N08, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF511 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Fairchild Semiconductor Corporation RFP2N08 vs IRF511
IRF511 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP2N08 vs IRF511
IRF513 IRF513 Texas Instruments RFP2N08 vs IRF513
IRF513 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Fairchild Semiconductor Corporation RFP2N08 vs IRF513
IRF511 IRF511 Texas Instruments RFP2N08 vs IRF511
IRF513 TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,4.9A I(D),TO-220AB National Semiconductor Corporation RFP2N08 vs IRF513
Part Number Description Manufacturer Compare
IRF510PBF Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix RFP2N08 vs IRF510PBF
IRF510 5.6A, 100V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP2N08 vs IRF510
IRF540N 33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP2N08 vs IRF540N
IRF510-009 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP2N08 vs IRF510-009
IRF512 4.9A, 100V, 0.74ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP2N08 vs IRF512
IRF512 Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP2N08 vs IRF512
IRF510 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor RFP2N08 vs IRF510
IRF511 5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP2N08 vs IRF511
IRF511 Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP2N08 vs IRF511
IRF510-010 Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP2N08 vs IRF510-010

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