Datasheets
IRF250 by:

30A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

Part Details for IRF250 by Intersil Corporation

Overview of IRF250 by Intersil Corporation

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Part Details for IRF250

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IRF250 Part Data Attributes

IRF250 Intersil Corporation
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IRF250 Intersil Corporation 30A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AE
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 220 ns
Turn-on Time-Max (ton) 210 ns

Alternate Parts for IRF250

This table gives cross-reference parts and alternative options found for IRF250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF250 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Harris Semiconductor IRF250 vs IRF250
IRF250R1 30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF250 vs IRF250R1
IRF250 30A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC IRF250 vs IRF250
IRF250 Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG IRF250 vs IRF250
IRF250 30A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics IRF250 vs IRF250
IRF250R1 Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors IRF250 vs IRF250R1
Part Number Description Manufacturer Compare
IRF251 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Littelfuse Inc IRF250 vs IRF251
IRF252 Power Field-Effect Transistor, 25A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Harris Semiconductor IRF250 vs IRF252
JANTXV2N6766 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) IRF250 vs JANTXV2N6766
JANTX2N6766 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Harris Semiconductor IRF250 vs JANTX2N6766
IRF251 30A, 150V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation IRF250 vs IRF251
IRF253 Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE Harris Semiconductor IRF250 vs IRF253
IRF250-JQR-B Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors IRF250 vs IRF250-JQR-B
UFN252 Power Field-Effect Transistor, 25A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, Unitrode Corp (RETIRED) IRF250 vs UFN252
2N6766-JQRR1 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors IRF250 vs 2N6766-JQRR1
2N6766R1 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors IRF250 vs 2N6766R1

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