Datasheets
IRF141 by:

28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE

Part Details for IRF141 by Intersil Corporation

Overview of IRF141 by Intersil Corporation

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Part Details for IRF141

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IRF141 Part Data Attributes:

IRF141 Intersil Corporation
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IRF141 Intersil Corporation 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.077 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AE
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 150 W
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 135 ns
Turn-on Time-Max (ton) 133 ns

Alternate Parts for IRF141

This table gives cross-reference parts and alternative options found for IRF141. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF141, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF140 Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, MODIFIED TO-3, 2 PIN Infineon Technologies AG IRF141 vs IRF140
IRF143 POWER, FET National Semiconductor Corporation IRF141 vs IRF143
IRF141 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF141 vs IRF141
IRF141 Power Field-Effect Transistor, 28A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors IRF141 vs IRF141
IRF140-JQR-BR1 28A, 100V, 0.089ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3, HERMETIC SEALED, METAL PACKAGE-2 TT Electronics Power and Hybrid / Semelab Limited IRF141 vs IRF140-JQR-BR1
IRF140R1 Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL PACKAGE-2 TT Electronics Resistors IRF141 vs IRF140R1
IRF140 Power Field-Effect Transistor, 27A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 Vishay Siliconix IRF141 vs IRF140
IRF140 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation IRF141 vs IRF140
IRF143 25A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 STMicroelectronics IRF141 vs IRF143
IRF143 25A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Intersil Corporation IRF141 vs IRF143
Part Number Description Manufacturer Compare
IRF130SMD05N Power Field-Effect Transistor, 11A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN TT Electronics Resistors IRF141 vs IRF130SMD05N
2N6755 Power Field-Effect Transistor, 12A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF141 vs 2N6755
IRF133 Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF141 vs IRF133
2N6756 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF141 vs 2N6756
IRF1302STRLPBF Power Field-Effect Transistor, 75A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF141 vs IRF1302STRLPBF
SHD230303 Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-28 Sensitron Semiconductors IRF141 vs SHD230303
IRF140 Power Field-Effect Transistor, 27A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 Vishay Siliconix IRF141 vs IRF140
2N6757R1 8A, 150V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3 TT Electronics Power and Hybrid / Semelab Limited IRF141 vs 2N6757R1
IRF120EC Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF141 vs IRF120EC
IRF130SMD05DSG-JQR-B 11A, 100V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF141 vs IRF130SMD05DSG-JQR-B

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