Part Details for IRF143 by National Semiconductor Corporation
Overview of IRF143 by National Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF143
IRF143 CAD Models
IRF143 Part Data Attributes
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IRF143
National Semiconductor Corporation
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Datasheet
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IRF143
National Semiconductor Corporation
POWER, FET
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 25 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Operating Temperature-Max | 175 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for IRF143
This table gives cross-reference parts and alternative options found for IRF143. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF143, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF141 | Power Field-Effect Transistor, 28A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | Harris Semiconductor | IRF143 vs IRF141 |
IRF140R1 | 28A, 100V, 0.089ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3, HERMETIC SEALED, METAL PACKAGE-2 | TT Electronics Power and Hybrid / Semelab Limited | IRF143 vs IRF140R1 |
IRF140 | Power Field-Effect Transistor, 27A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN | Fairchild Semiconductor Corporation | IRF143 vs IRF140 |
IRF141 | 27A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Motorola Mobility LLC | IRF143 vs IRF141 |
IRF140-JQR-BR1 | Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL PACKAGE-2 | TT Electronics Resistors | IRF143 vs IRF140-JQR-BR1 |
IRF140 | Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL PACKAGE-2 | TT Electronics Resistors | IRF143 vs IRF140 |
IRF141 | 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Intersil Corporation | IRF143 vs IRF141 |
IRF142 | 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | STMicroelectronics | IRF143 vs IRF142 |
IRF143 | 25A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Rochester Electronics LLC | IRF143 vs IRF143 |
IRF142 | Power Field-Effect Transistor, 24A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 | TT Electronics Resistors | IRF143 vs IRF142 |