Datasheets
IRF120EC by: International Rectifier

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Part Details for IRF120EC by International Rectifier

Overview of IRF120EC by International Rectifier

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Part Details for IRF120EC

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IRF120EC Part Data Attributes

IRF120EC International Rectifier
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IRF120EC International Rectifier Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Reference Standard CECC
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRF120EC

This table gives cross-reference parts and alternative options found for IRF120EC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF120EC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF120EC vs 2N6758
IRF141 27A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC IRF120EC vs IRF141
UFN222 Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) IRF120EC vs UFN222
2N6755 Power Field-Effect Transistor, 12A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF120EC vs 2N6755
IRF133 Power Field-Effect Transistor, 12A I(D), 80V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF120EC vs IRF133
IRF140 Power Field-Effect Transistor, 27A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN Fairchild Semiconductor Corporation IRF120EC vs IRF140
IRF230-JQR-B 9A, 200V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA, TO-3, 2 PIN TT Electronics Power and Hybrid / Semelab Limited IRF120EC vs IRF230-JQR-B
2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors IRF120EC vs 2N6758
IRF233R 8A, 150V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF120EC vs IRF233R
2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, TO-3, METAL CAN-2 Microsemi Corporation IRF120EC vs 2N6758

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