Part Details for IRF140R by Harris Semiconductor
Overview of IRF140R by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF140R
IRF140R CAD Models
IRF140R Part Data Attributes
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IRF140R
Harris Semiconductor
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Datasheet
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IRF140R
Harris Semiconductor
Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | FLANGE MOUNT, O-MBFM-P2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.077 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AE | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 135 ns | |
| Turn-on Time-Max (ton) | 133 ns |
Alternate Parts for IRF140R
This table gives cross-reference parts and alternative options found for IRF140R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF140R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF141 | 27A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Motorola Mobility LLC | IRF140R vs IRF141 |
| 2N6758 | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Unitrode Corp (RETIRED) | IRF140R vs 2N6758 |
| JANHCA2N6756 | Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | IRF140R vs JANHCA2N6756 |
| JANTXV2N6756 | Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | Motorola Semiconductor Products | IRF140R vs JANTXV2N6756 |
| IRF220 | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | IRF140R vs IRF220 |
| 2N6756 | 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA | Motorola Mobility LLC | IRF140R vs 2N6756 |
| IRF222 | Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | International Rectifier | IRF140R vs IRF222 |
| IRF130SMDR4 | Power Field-Effect Transistor, 11A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Resistors | IRF140R vs IRF130SMDR4 |
| IRF140 | Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, MODIFIED TO-3, 2 PIN | Infineon Technologies AG | IRF140R vs IRF140 |
| IRF130ED | Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, | Infineon Technologies AG | IRF140R vs IRF130ED |