Datasheets
JANHCA2N6756 by:

Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3

Part Details for JANHCA2N6756 by Infineon Technologies AG

Overview of JANHCA2N6756 by Infineon Technologies AG

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Applications Industrial Automation Motor control systems

Part Details for JANHCA2N6756

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JANHCA2N6756 Part Data Attributes

JANHCA2N6756 Infineon Technologies AG
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JANHCA2N6756 Infineon Technologies AG Power Field-Effect Transistor, 14A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description DIE-3
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 14 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUUC-N3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Qualified
Reference Standard MIL-19500/542G
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JANHCA2N6756

This table gives cross-reference parts and alternative options found for JANHCA2N6756. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANHCA2N6756, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF130-JQR-B Power Field-Effect Transistor, 45A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors JANHCA2N6756 vs IRF130-JQR-B
IRF130-JQR-BR1 45A, 100V, 0.21ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited JANHCA2N6756 vs IRF130-JQR-BR1
IRF130 Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG JANHCA2N6756 vs IRF130
IRF131 Power Field-Effect Transistor, 14A I(D), 80V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier JANHCA2N6756 vs IRF131
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products JANHCA2N6756 vs JANTXV2N6756
JANTX2N6756 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation JANHCA2N6756 vs JANTX2N6756
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corporation JANHCA2N6756 vs JANTXV2N6756
2N6756 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC JANHCA2N6756 vs 2N6756
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANHCA2N6756 vs JANTXV2N6756
IRF132 Power Field-Effect Transistor, 12A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier JANHCA2N6756 vs IRF132
Part Number Description Manufacturer Compare
IRF141 27A, 60V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Motorola Mobility LLC JANHCA2N6756 vs IRF141
2N6758 Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) JANHCA2N6756 vs 2N6758
JANTXV2N6756 Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products JANHCA2N6756 vs JANTXV2N6756
IRF220 Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier JANHCA2N6756 vs IRF220
2N6756 14A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Motorola Mobility LLC JANHCA2N6756 vs 2N6756
IRF222 Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier JANHCA2N6756 vs IRF222
IRF130SMDR4 Power Field-Effect Transistor, 11A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN TT Electronics Resistors JANHCA2N6756 vs IRF130SMDR4
IRF140 Power Field-Effect Transistor, 28A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, MODIFIED TO-3, 2 PIN Infineon Technologies AG JANHCA2N6756 vs IRF140
IRF130ED Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG JANHCA2N6756 vs IRF130ED
IRF120ED Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier JANHCA2N6756 vs IRF120ED

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