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Transistors Power Field-Effect Transistors IPW60R190P6FKSA1

IPW60R190P6FKSA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3

Overview of IPW60R190P6FKSA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IPW60R190P6FKSA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 54X5233
Newark Mosfet, N-Ch, 600V, 20.2A, 151W, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:20.2A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IPW60R190P6FKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 81
  • 1 $0.6640
  • 10 $0.6640
  • 50 $0.6640
  • 100 $0.6640
  • 500 $0.6640
  • 1,000 $0.6640
  • 2,500 $0.6640
  • 5,000 $0.6640
$0.6640 Buy Now
DISTI # IPW60R190P6FKSA1-ND
DigiKey MOSFET N-CH 600V 20.2A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube 15
In Stock
  • 1 $3.1500
  • 30 $1.7483
  • 120 $1.5962
$1.5962 / $3.1500 Buy Now
DISTI # 54X5233
Avnet Americas Trans MOSFET N-CH 650V 20.2A 3-Pin TO-247 Tube - Bulk (Alt: 54X5233) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 14 Weeks, 5 Days Container: Bulk 76 Partner Stock
  • 1 $3.1000
  • 10 $2.6800
  • 50 $2.3500
  • 100 $2.2100
  • 500 $1.4300
$1.4300 / $3.1000 Buy Now
DISTI # IPW60R190P6FKSA1
Avnet Americas Trans MOSFET N-CH 650V 20.2A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW60R190P6FKSA1) RoHS: Not Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube 0
RFQ
DISTI # 726-IPW60R190P6FKSA1
Mouser Electronics MOSFETs Y RoHS: Compliant 0
  • 240 $1.5900
  • 5,040 $1.5600
$1.5600 / $1.5900 Order Now
DISTI # V36:1790_06377908
Arrow Electronics Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2152 Americas - 497
  • 1 $2.3952
  • 10 $2.3453
  • 25 $1.9062
  • 100 $1.7811
$1.7811 / $2.3952 Buy Now
Future Electronics N-Channel 600 V 20.2 A 190 mΩ 37 nC CoolMOS P6 Power Transistor - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks Container: Tube 0
Tube
  • 30 $1.6600
  • 480 $1.6400
  • 720 $1.6200
  • 1,200 $1.6000
  • 2,400 $1.5600
$1.5600 / $1.6600 Buy Now
Future Electronics N-Channel 600 V 20.2 A 190 mΩ 37 nC CoolMOS P6 Power Transistor - TO-247 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks Container: Tube 0
Tube
  • 30 $1.6600
  • 480 $1.6400
  • 720 $1.6200
  • 1,200 $1.6000
  • 2,400 $1.5600
$1.5600 / $1.6600 Buy Now
DISTI # 66404282
Verical Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 240 Package Multiple: 240 Date Code: 2152 Americas - 12240
  • 240 $2.0560
$2.0560 Buy Now
DISTI # 60651173
Verical Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-247 Tube RoHS: Compliant Min Qty: 4 Package Multiple: 1 Date Code: 2152 Americas - 497
  • 4 $2.3952
$2.3952 Buy Now
DISTI # IPW60R190P6FKSA1
TME Transistor: N-MOSFET, unipolar, 600V, 20.2A, 151W, PG-TO247-3 Min Qty: 1 0
  • 1 $8.0800
  • 3 $6.9500
  • 10 $5.5800
  • 25 $4.8500
$4.8500 / $8.0800 RFQ
DISTI # C1S322000899023
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 497
  • 1 $2.3952
  • 10 $2.3453
  • 25 $1.9062
  • 100 $1.7811
$1.7811 / $2.3952 Buy Now
DISTI # SP001017090
EBV Elektronik Trans MOSFET N-CH 650V 20.2A 3-Pin TO-247 Tube (Alt: SP001017090) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now
LCSC 600V 20.2A 151W 190m7.6A10V 4.5V630u 1 N-Channel TO-247-3 MOSFETs ROHS 8
  • 1 $2.3730
  • 10 $2.1129
  • 30 $1.9549
  • 100 $1.8219
$1.8219 / $2.3730 Buy Now

CAD Models for IPW60R190P6FKSA1 by Infineon Technologies AG
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Part Data Attributes for IPW60R190P6FKSA1 by Infineon Technologies AG
Parametric Data

IPW60R190P6FKSA1
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
14 Weeks, 5 Days
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
419 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain-source On Resistance-Max
0.19 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
57 A
Surface Mount
NO
Terminal Finish
Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IPW60R190P6FKSA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
    VS

Alternate Parts for IPW60R190P6FKSA1

This table gives cross-reference parts and alternative options found for IPW60R190P6FKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW60R190P6FKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IPW60R190P6 Power Field-Effect Transistor, Infineon Technologies AG IPW60R190P6FKSA1 vs IPW60R190P6
Part Number Description Manufacturer Compare
IPP60R190P6 Power Field-Effect Transistor, 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPW60R190P6FKSA1 vs IPP60R190P6
IPP60R190P6XKSA1 Power Field-Effect Transistor, 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IPW60R190P6FKSA1 vs IPP60R190P6XKSA1
IPW60R190P6 Power Field-Effect Transistor, Infineon Technologies AG IPW60R190P6FKSA1 vs IPW60R190P6
FCP190N65S3R0 Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 17 A, 190 mΩ, TO-220, 800-TUBE onsemi IPW60R190P6FKSA1 vs FCP190N65S3R0
FCP190N65S3 Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 17 A, 190 mΩ, TO-220, 800-TUBE onsemi IPW60R190P6FKSA1 vs FCP190N65S3

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