Part Details for IPB60R099CPATMA1 by Infineon Technologies AG
Overview of IPB60R099CPATMA1 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB60R099CPATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
33P7131
|
Newark | N Channel Mosfet, 650V, 31A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:31A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPB60R099CPATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 724 |
|
$5.3500 / $8.4900 | Buy Now |
DISTI #
IPB60R099CPATMA1CT-ND
|
DigiKey | MOSFET N-CH 600V 31A TO263-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
4943 In Stock |
|
$4.2445 / $9.0900 | Buy Now |
DISTI #
IPB60R099CPATMA1
|
Avnet Americas | Trans MOSFET N-CH 650V 31A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R099CPATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 1000 |
|
RFQ | |
DISTI #
726-IPB60R099CPATMA1
|
Mouser Electronics | MOSFETs N-Ch 650V 31A D2PAK-2 CoolMOS CP RoHS: Compliant | 612 |
|
$4.2400 / $7.1300 | Buy Now |
DISTI #
E32:1076_00045908
|
Arrow Electronics | Trans MOSFET N-CH 650V 31A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2406 | Europe - 358 |
|
$4.7156 | Buy Now |
|
Future Electronics | Single N-Channel 650 V 99 mOhm 60 nC CoolMOS™ Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks Container: Reel | 0Reel |
|
$4.0300 | Buy Now |
DISTI #
77799035
|
Verical | Trans MOSFET N-CH 650V 31A 3-Pin(2+Tab) D2PAK T/R Min Qty: 2 Package Multiple: 1 Date Code: 2406 | Americas - 358 |
|
$4.6657 | Buy Now |
DISTI #
IPB60R099CPATMA1
|
TME | Transistor: N-MOSFET, unipolar, 600V, 31A, 255W, PG-TO263-3-2 Min Qty: 1 | 0 |
|
$5.3300 / $8.8600 | RFQ |
DISTI #
SP000088490
|
EBV Elektronik | Power MOSFET, N Channel, 650 V, 31 A, 0.09 ohm, TO-263 (D2PAK), Surface Mount (Alt: SP000088490) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for IPB60R099CPATMA1
IPB60R099CPATMA1 CAD Models
IPB60R099CPATMA1 Part Data Attributes
|
IPB60R099CPATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB60R099CPATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 800 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 31 A | |
Drain-source On Resistance-Max | 0.099 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 93 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB60R099CPATMA1
This table gives cross-reference parts and alternative options found for IPB60R099CPATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R099CPATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB60R099CPXT | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB60R099CPATMA1 vs IPB60R099CPXT |
IPB60R099CP | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | IPB60R099CPATMA1 vs IPB60R099CP |
IPB60R099CS | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN | Infineon Technologies AG | IPB60R099CPATMA1 vs IPB60R099CS |
IPB60R099CPA | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | IPB60R099CPATMA1 vs IPB60R099CPA |
SP000088490 | Power Field-Effect Transistor, | Infineon Technologies AG | IPB60R099CPATMA1 vs SP000088490 |
IPB60R099CPAATMA1 | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB60R099CPATMA1 vs IPB60R099CPAATMA1 |