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Part Details for IPL65R070C7 by Infineon Technologies AG
Overview of IPL65R070C7 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IPL65R070C7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-IPL65R070C7
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Mouser Electronics | MOSFETs HIGH POWER BEST IN CLASS RoHS: Compliant | 2554 |
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$3.8100 / $7.1900 | Buy Now |
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LCSC | VSON-4(8x8) MOSFETs ROHS | 5 |
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$6.3997 / $6.8128 | Buy Now |
Part Details for IPL65R070C7
IPL65R070C7 CAD Models
IPL65R070C7 Part Data Attributes
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IPL65R070C7
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPL65R070C7
Infineon Technologies AG
Power Field-Effect Transistor, 28A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | VSON-4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 171 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 28 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PSSO-N4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 2A | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 145 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPL65R070C7
This table gives cross-reference parts and alternative options found for IPL65R070C7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPL65R070C7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SP000088490 | Power Field-Effect Transistor, | Infineon Technologies AG | IPL65R070C7 vs SP000088490 |
| SIHG33N65EF-GE3 | Power Field-Effect Transistor, 31.6A I(D), 650V, 0.109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IPL65R070C7 vs SIHG33N65EF-GE3 |
| IPB65R110CFD | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPL65R070C7 vs IPB65R110CFD |
| IPI60R099CPXKSA1 | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPL65R070C7 vs IPI60R099CPXKSA1 |
| IPW60R099CPA | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPL65R070C7 vs IPW60R099CPA |
| TK31V60W | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | IPL65R070C7 vs TK31V60W |
| IPW60R099P7 | Power Field-Effect Transistor, 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Infineon Technologies AG | IPL65R070C7 vs IPW60R099P7 |
| STW36NM60N | N-channel 600 V, 0.092 Ohm, 29 A MDmesh(TM) II Power MOSFET in TO-247 | STMicroelectronics | IPL65R070C7 vs STW36NM60N |
| IPB60R125CPATMA1 | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPL65R070C7 vs IPB60R125CPATMA1 |
| IPB60R099CPA | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | IPL65R070C7 vs IPB60R099CPA |