Part Details for IPB60R125CPATMA1 by Infineon Technologies AG
Overview of IPB60R125CPATMA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB60R125CPATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
33P7133
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Newark | Mosfet, N Ch, 650V, 25A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:25A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Infineon IPB60R125CPATMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 3650 |
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$2.7400 / $5.3100 | Buy Now |
DISTI #
IPB60R125CPATMA1CT-ND
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DigiKey | MOSFET N-CH 600V 25A TO263-3 Min Qty: 1 Lead time: 15 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1747 In Stock |
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$3.1602 / $7.2700 | Buy Now |
DISTI #
IPB60R125CPATMA1
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Avnet Americas | Trans MOSFET N-CH 600V 25A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R125CPATMA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
726-IPB60R125CPATMA1
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Mouser Electronics | MOSFETs N-Ch 600V 25mA D2PAK-2 CoolMOS CP RoHS: Compliant | 0 |
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Order Now | |
DISTI #
82431620
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Verical | IPB60R125CPATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 600V 25A 3-Pin(2+Tab) D2PAK T/R - Arrow.com Min Qty: 1000 Package Multiple: 1000 Date Code: 2423 | Americas - 23000 |
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$3.0518 / $3.1081 | Buy Now |
DISTI #
SP000297368
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EBV Elektronik | Transistor MOSFET N-Channel 650V 25A 3-Pin TO-263 T/R (Alt: SP000297368) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for IPB60R125CPATMA1
IPB60R125CPATMA1 CAD Models
IPB60R125CPATMA1 Part Data Attributes
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IPB60R125CPATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPB60R125CPATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 708 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 25 A | |
Drain-source On Resistance-Max | 0.125 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 82 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB60R125CPATMA1
This table gives cross-reference parts and alternative options found for IPB60R125CPATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB60R125CPATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SP000088490 | Power Field-Effect Transistor, | Infineon Technologies AG | IPB60R125CPATMA1 vs SP000088490 |
SIHG33N65EF-GE3 | Power Field-Effect Transistor, 31.6A I(D), 650V, 0.109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IPB60R125CPATMA1 vs SIHG33N65EF-GE3 |
IPB65R110CFD | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 | Infineon Technologies AG | IPB60R125CPATMA1 vs IPB65R110CFD |
IPI60R099CPXKSA1 | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | IPB60R125CPATMA1 vs IPI60R099CPXKSA1 |
IPW60R099CPA | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPB60R125CPATMA1 vs IPW60R099CPA |
TK31V60W | Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V | Toshiba America Electronic Components | IPB60R125CPATMA1 vs TK31V60W |
IPW60R099P7 | Power Field-Effect Transistor, 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Infineon Technologies AG | IPB60R125CPATMA1 vs IPW60R099P7 |
STW36NM60N | N-channel 600 V, 0.092 Ohm, 29 A MDmesh(TM) II Power MOSFET in TO-247 | STMicroelectronics | IPB60R125CPATMA1 vs STW36NM60N |
IPL65R070C7 | Power Field-Effect Transistor, 28A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VSON-4 | Infineon Technologies AG | IPB60R125CPATMA1 vs IPL65R070C7 |
IPB60R099CPA | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Infineon Technologies AG | IPB60R125CPATMA1 vs IPB60R099CPA |