Part Details for IPB05N03LB by Infineon Technologies AG
Overview of IPB05N03LB by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IPB05N03LB
IPB05N03LB CAD Models
IPB05N03LB Part Data Attributes:
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IPB05N03LB
Infineon Technologies AG
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Datasheet
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IPB05N03LB
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 136 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.005 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 94 W | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB05N03LB
This table gives cross-reference parts and alternative options found for IPB05N03LB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB05N03LB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPB04N03LB | Power Field-Effect Transistor, 80A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB05N03LB vs IPB04N03LB |
IPB034N03LG | Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB05N03LB vs IPB034N03LG |
ISL9N303AS3_NL | Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE PACKAGE-3 | Fairchild Semiconductor Corporation | IPB05N03LB vs ISL9N303AS3_NL |
934055500118 | TRANSISTOR 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power | NXP Semiconductors | IPB05N03LB vs 934055500118 |
BUK9M5R2-30EX | BUK9M5R2-30E - N-channel 30 V, 5.2 mΩ logic level MOSFET in LFPAK33@en-us | Nexperia | IPB05N03LB vs BUK9M5R2-30EX |
STU150N3LLH6 | 80A, 30V, 0.0049ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 | STMicroelectronics | IPB05N03LB vs STU150N3LLH6 |
STD100N3LF3 | N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET(TM) II Power MOSFET in a DPAK package | STMicroelectronics | IPB05N03LB vs STD100N3LF3 |