Datasheets
IPB05N03LB by: Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN

Part Details for IPB05N03LB by Infineon Technologies AG

Overview of IPB05N03LB by Infineon Technologies AG

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Part Details for IPB05N03LB

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IPB05N03LB Part Data Attributes:

IPB05N03LB Infineon Technologies AG
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IPB05N03LB Infineon Technologies AG Power Field-Effect Transistor, 80A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 136 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.005 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 94 W
Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPB05N03LB

This table gives cross-reference parts and alternative options found for IPB05N03LB. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB05N03LB, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB04N03LB Power Field-Effect Transistor, 80A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB05N03LB vs IPB04N03LB
IPB034N03LG Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPB05N03LB vs IPB034N03LG
ISL9N303AS3_NL Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE PACKAGE-3 Fairchild Semiconductor Corporation IPB05N03LB vs ISL9N303AS3_NL
934055500118 TRANSISTOR 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power NXP Semiconductors IPB05N03LB vs 934055500118
BUK9M5R2-30EX BUK9M5R2-30E - N-channel 30 V, 5.2 mΩ logic level MOSFET in LFPAK33@en-us Nexperia IPB05N03LB vs BUK9M5R2-30EX
STU150N3LLH6 80A, 30V, 0.0049ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 STMicroelectronics IPB05N03LB vs STU150N3LLH6
STD100N3LF3 N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET(TM) II Power MOSFET in a DPAK package STMicroelectronics IPB05N03LB vs STD100N3LF3

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