Part Details for IPB034N03LG by Infineon Technologies AG
Overview of IPB034N03LG by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IPB034N03LG
IPB034N03LG CAD Models
IPB034N03LG Part Data Attributes
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IPB034N03LG
Infineon Technologies AG
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Datasheet
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IPB034N03LG
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | D2PAK | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 70 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0047 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 94 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPB034N03LG
This table gives cross-reference parts and alternative options found for IPB034N03LG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB034N03LG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPB05N03LB | Power Field-Effect Transistor, 80A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB034N03LG vs IPB05N03LB |
BUK9M5R2-30EX | BUK9M5R2-30E - N-channel 30 V, 5.2 mΩ logic level MOSFET in LFPAK33@en-us | Nexperia | IPB034N03LG vs BUK9M5R2-30EX |
ISL9N303AS3STL86Z | Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | IPB034N03LG vs ISL9N303AS3STL86Z |
ISL9N303AS3STL99Z | Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | IPB034N03LG vs ISL9N303AS3STL99Z |
STD100N03LT4 | 80A, 30V, 0.0055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, ROHS COMPLIANT, DPAK-3 | STMicroelectronics | IPB034N03LG vs STD100N03LT4 |
ISL9N303AS3_NL | Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE PACKAGE-3 | Fairchild Semiconductor Corporation | IPB034N03LG vs ISL9N303AS3_NL |
IPB04N03LB | Power Field-Effect Transistor, 80A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IPB034N03LG vs IPB04N03LB |
STU150N3LLH6 | 80A, 30V, 0.0049ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 | STMicroelectronics | IPB034N03LG vs STU150N3LLH6 |
ISL9N303AS3STS62Z | Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | IPB034N03LG vs ISL9N303AS3STS62Z |
STD100N3LF3 | N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET(TM) II Power MOSFET in a DPAK package | STMicroelectronics | IPB034N03LG vs STD100N3LF3 |