Part Details for 934055500118 by NXP Semiconductors
Overview of 934055500118 by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for 934055500118
934055500118 CAD Models
934055500118 Part Data Attributes
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934055500118
NXP Semiconductors
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Datasheet
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934055500118
NXP Semiconductors
TRANSISTOR 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.005 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for 934055500118
This table gives cross-reference parts and alternative options found for 934055500118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 934055500118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB05N03LB | Power Field-Effect Transistor, 80A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | 934055500118 vs IPB05N03LB |
| BUK9M5R2-30EX | BUK9M5R2-30E - N-channel 30 V, 5.2 mΩ logic level MOSFET in LFPAK33@en-us | Nexperia | 934055500118 vs BUK9M5R2-30EX |
| ISL9N303AS3STL86Z | Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | 934055500118 vs ISL9N303AS3STL86Z |
| ISL9N303AS3STL99Z | Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | 934055500118 vs ISL9N303AS3STL99Z |
| STD100N03LT4 | 80A, 30V, 0.0055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, ROHS COMPLIANT, DPAK-3 | STMicroelectronics | 934055500118 vs STD100N03LT4 |
| ISL9N303AS3_NL | Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE PACKAGE-3 | Fairchild Semiconductor Corporation | 934055500118 vs ISL9N303AS3_NL |
| IPB04N03LB | Power Field-Effect Transistor, 80A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | 934055500118 vs IPB04N03LB |
| STU150N3LLH6 | 80A, 30V, 0.0049ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 | STMicroelectronics | 934055500118 vs STU150N3LLH6 |
| IPB034N03LG | Power Field-Effect Transistor, 80A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | 934055500118 vs IPB034N03LG |
| ISL9N303AS3STS62Z | Power Field-Effect Transistor, 75A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | 934055500118 vs ISL9N303AS3STS62Z |