Part Details for IPB016N06L3GATMA1 by Infineon Technologies AG
Overview of IPB016N06L3GATMA1 by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IPB016N06L3GATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
IPB016N06L3GATMA1CT-ND
|
DigiKey | MOSFET N-CH 60V 180A TO263-7 Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
9313 In Stock |
|
$1.8026 / $4.7800 | Buy Now |
|
DISTI #
726-IPB016N06L3GATMA
|
Mouser Electronics | MOSFETs N-Ch 60V 180A D2PAK-6 OptiMOS 3 RoHS: Compliant | 717 |
|
$1.8000 / $3.9200 | Buy Now |
|
|
Future Electronics | Single N-Channel 60 V 1.6 mOhm 125 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks Container: Reel | 13000Reel |
|
$1.7700 / $1.8300 | Buy Now |
|
|
Future Electronics | Single N-Channel 60 V 1.6 mOhm 125 nC OptiMOS™ Power Mosfet - D2PAK-7 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks Container: Reel | 0Reel |
|
$1.7700 / $1.8100 | Buy Now |
Part Details for IPB016N06L3GATMA1
IPB016N06L3GATMA1 CAD Models
IPB016N06L3GATMA1 Part Data Attributes
|
|
IPB016N06L3GATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IPB016N06L3GATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 180A I(D), 60V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, 7 PIN
|
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G6 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 28 Weeks, 4 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 634 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 180 A | |
| Drain-source On Resistance-Max | 0.0016 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 720 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IPB016N06L3GATMA1
This table gives cross-reference parts and alternative options found for IPB016N06L3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPB016N06L3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPB017N06N3GATMA1 | Power Field-Effect Transistor, 180A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, D2PAK-7 | Infineon Technologies AG | IPB016N06L3GATMA1 vs IPB017N06N3GATMA1 |
| IPB016N06L3GXT | Power Field-Effect Transistor, 180A I(D), 60V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, GREEN, PLASTIC, TO-263, 7 PIN | Infineon Technologies AG | IPB016N06L3GATMA1 vs IPB016N06L3GXT |
| IPB180N06S4H1ATMA1 | Power Field-Effect Transistor, 180A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263, GREEN, PLASTIC PACKAGE-7/6 | Infineon Technologies AG | IPB016N06L3GATMA1 vs IPB180N06S4H1ATMA1 |