Parametric results for: IPB016N06L3GATMA1 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Surface Mount

LOGIC LEVEL COMPATIBLE 1

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634.0 mJ 1

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DRAIN 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

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DS Breakdown Voltage-Min (1)

60 V 1

1 hit Apply

Drain Current-Max (ID) (1)

180 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

1.6 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

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TO-263 1

1 hit Apply

R-PSSO-G6 1

1 hit Apply

e3 1

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Manufacturer (1)

Infineon Technologies AG 1

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1 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

6 1

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ENHANCEMENT MODE 1

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175.0 °C 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

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Active 1

1 hit Apply

No 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply