IPB016N06L3GATMA1
vs
IPB017N06N3GATMA1
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Part Package Code
D2PAK
TO-263
Package Description
SMALL OUTLINE, R-PSSO-G6
SMALL OUTLINE, R-PSSO-G6
Pin Count
4
7
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
EAR99
Factory Lead Time
28 Weeks, 4 Days
14 Weeks
Samacsys Manufacturer
Infineon
Infineon
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
634 mJ
634 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
180 A
180 A
Drain-source On Resistance-Max
0.0016 Ω
0.0017 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263
TO-263
JESD-30 Code
R-PSSO-G6
R-PSSO-G6
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Number of Elements
1
1
Number of Terminals
6
6
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
720 A
720 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin (Sn)
Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Compare IPB016N06L3GATMA1 with alternatives
Compare IPB017N06N3GATMA1 with alternatives