Datasheets
HYB3118165BSJ-50 by:

EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42

Part Details for HYB3118165BSJ-50 by Siemens

Overview of HYB3118165BSJ-50 by Siemens

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Part Details for HYB3118165BSJ-50

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HYB3118165BSJ-50 Part Data Attributes:

HYB3118165BSJ-50 Siemens
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HYB3118165BSJ-50 Siemens EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Part Package Code SOJ
Package Description ,
Pin Count 42
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 50 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 Code R-PDSO-J42
Memory Density 16777216 bit
Memory IC Type EDO DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 42
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX16
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form J BEND
Terminal Position DUAL

Alternate Parts for HYB3118165BSJ-50

This table gives cross-reference parts and alternative options found for HYB3118165BSJ-50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HYB3118165BSJ-50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
KM416V1004CJ-L5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Samsung Semiconductor HYB3118165BSJ-50 vs KM416V1004CJ-L5
GM71V18163CLJ-5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 SK Hynix Inc HYB3118165BSJ-50 vs GM71V18163CLJ-5
MT4LC1M16E5DJS-5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Micron Technology Inc HYB3118165BSJ-50 vs MT4LC1M16E5DJS-5
MSM51V16165DSL-50JS EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 LAPIS Semiconductor Co Ltd HYB3118165BSJ-50 vs MSM51V16165DSL-50JS
GM71VS18163CLJ-5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, LG Semicon Co Ltd HYB3118165BSJ-50 vs GM71VS18163CLJ-5
GM71V16163CLJ-5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, LG Semicon Co Ltd HYB3118165BSJ-50 vs GM71V16163CLJ-5
K4E151612D-JL50 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Samsung Semiconductor HYB3118165BSJ-50 vs K4E151612D-JL50
K4E171612C-JL50 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Samsung Semiconductor HYB3118165BSJ-50 vs K4E171612C-JL50
KM416V1004CJ-5 EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42 Samsung Semiconductor HYB3118165BSJ-50 vs KM416V1004CJ-5
IS41LV16100-50KI EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, MS-027, SOJ-42 Integrated Silicon Solution Inc HYB3118165BSJ-50 vs IS41LV16100-50KI
Part Number Description Manufacturer Compare
MSM51V18165F-50JS EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 OKI Electric Industry Co Ltd HYB3118165BSJ-50 vs MSM51V18165F-50JS
MSM51V18165F-60JS EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 OKI Electric Industry Co Ltd HYB3118165BSJ-50 vs MSM51V18165F-60JS
MSM51V16165D-50JS EDO DRAM, 1MX16, 50ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 OKI Electric Industry Co Ltd HYB3118165BSJ-50 vs MSM51V16165D-50JS
MSM51V16165D-70JS EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 OKI Electric Industry Co Ltd HYB3118165BSJ-50 vs MSM51V16165D-70JS
MSM51V18165F-70JS EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 OKI Electric Industry Co Ltd HYB3118165BSJ-50 vs MSM51V18165F-70JS
MSM51V16165F-70JS EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 OKI Electric Industry Co Ltd HYB3118165BSJ-50 vs MSM51V16165F-70JS
MSM51V16165DSL-70JS EDO DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 OKI Electric Industry Co Ltd HYB3118165BSJ-50 vs MSM51V16165DSL-70JS
MSM51V16165F-60JS EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 OKI Electric Industry Co Ltd HYB3118165BSJ-50 vs MSM51V16165F-60JS
TC51V16160AJ-70 IC 1M X 16 OTHER DRAM, 70 ns, PDSO42, SOJ-42, Dynamic RAM Toshiba America Electronic Components HYB3118165BSJ-50 vs TC51V16160AJ-70
MSM51V16165D-60JS EDO DRAM, 1MX16, 60ns, CMOS, PDSO42, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-42 OKI Electric Industry Co Ltd HYB3118165BSJ-50 vs MSM51V16165D-60JS

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