Datasheets
HY53C464LS-12 by: SK Hynix Inc

Fast Page DRAM, 64KX4, 120ns, CMOS, PDIP18

Part Details for HY53C464LS-12 by SK Hynix Inc

Overview of HY53C464LS-12 by SK Hynix Inc

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Part Details for HY53C464LS-12

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HY53C464LS-12 Part Data Attributes

HY53C464LS-12 SK Hynix Inc
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HY53C464LS-12 SK Hynix Inc Fast Page DRAM, 64KX4, 120ns, CMOS, PDIP18
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SK HYNIX INC
Package Description DIP, DIP18,.3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Time-Max 120 ns
I/O Type COMMON
JESD-30 Code R-PDIP-T18
JESD-609 Code e0
Memory Density 262144 bit
Memory IC Type FAST PAGE DRAM
Memory Width 4
Number of Terminals 18
Number of Words 65536 words
Number of Words Code 64000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 64KX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code DIP
Package Equivalence Code DIP18,.3
Package Shape RECTANGULAR
Package Style IN-LINE
Qualification Status Not Qualified
Refresh Cycles 256
Standby Current-Max 0.001 A
Supply Current-Max 0.045 mA
Supply Voltage-Nom (Vsup) 5 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Pitch 2.54 mm
Terminal Position DUAL

Alternate Parts for HY53C464LS-12

This table gives cross-reference parts and alternative options found for HY53C464LS-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HY53C464LS-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HM50465P-12 Nibble Mode DRAM, 64KX4, 120ns, NMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Hitachi Ltd HY53C464LS-12 vs HM50465P-12
LC32464P-80 Fast Page DRAM, 256KX4, 80ns, CMOS, PDIP18, PLASTIC, DIP-18 SANYO Electric Co Ltd HY53C464LS-12 vs LC32464P-80
P21464-06 Page Mode DRAM, 64KX4, 60ns, MOS, PDIP18, PLASTIC, DIP-18 Intel Corporation HY53C464LS-12 vs P21464-06
UD61464DC07 Fast Page DRAM, 64KX4, 70ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 ZMDI HY53C464LS-12 vs UD61464DC07
P21464-10 Page Mode DRAM, 64KX4, 100ns, MOS, PDIP18, PLASTIC, DIP-18 Intel Corporation HY53C464LS-12 vs P21464-10
UPD41464C-10 Page Mode DRAM, 64KX4, 100ns, NMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 NEC Electronics America Inc HY53C464LS-12 vs UPD41464C-10
MSM41464-10RS Page Mode DRAM, 64KX4, 100ns, NMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 OKI Electric Industry Co Ltd HY53C464LS-12 vs MSM41464-10RS
M5M4464AP-8 Page Mode DRAM, 64KX4, 80ns, NMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Mitsubishi Electric HY53C464LS-12 vs M5M4464AP-8
HM50465P-20 Nibble Mode DRAM, 64KX4, 200ns, NMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18 Hitachi Ltd HY53C464LS-12 vs HM50465P-20
KM41C466P-7 Static Column DRAM, 64KX4, 70ns, CMOS, PDIP18, PLASTIC, DIP-18 Samsung Semiconductor HY53C464LS-12 vs KM41C466P-7

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