Datasheets
HUF76639S3S by:

Power Field-Effect Transistor, 51A I(D), 100V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,

Part Details for HUF76639S3S by Fairchild Semiconductor Corporation

Overview of HUF76639S3S by Fairchild Semiconductor Corporation

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Price & Stock for HUF76639S3S

Part # Distributor Description Stock Price Buy
Rochester Electronics 51A, 100V, N-Channel Power MOSFET, TO-263AB RoHS: Compliant Status: Obsolete Min Qty: 1 188
  • 1 $0.7168
  • 25 $0.7025
  • 100 $0.6738
  • 500 $0.6451
  • 1,000 $0.6093
$0.6093 / $0.7168 Buy Now

Part Details for HUF76639S3S

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HUF76639S3S Part Data Attributes

HUF76639S3S Fairchild Semiconductor Corporation
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HUF76639S3S Fairchild Semiconductor Corporation Power Field-Effect Transistor, 51A I(D), 100V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 51 A
Drain-source On Resistance-Max 0.027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HUF76639S3S

This table gives cross-reference parts and alternative options found for HUF76639S3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HUF76639S3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF76639S3S 51A, 100V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF76639S3S vs HUF76639S3S
HUF76639S3S 51A, 100V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Rochester Electronics LLC HUF76639S3S vs HUF76639S3S
HUF76639S3ST 51A, 100V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Rochester Electronics LLC HUF76639S3S vs HUF76639S3ST
HUF76639S3ST 51A, 100V, 0.027ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation HUF76639S3S vs HUF76639S3ST
Part Number Description Manufacturer Compare
IRL2910SPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier HUF76639S3S vs IRL2910SPBF
IRL2910S Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Infineon Technologies AG HUF76639S3S vs IRL2910S
IRL2910STRRPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier HUF76639S3S vs IRL2910STRRPBF
IRL2910SHR Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier HUF76639S3S vs IRL2910SHR
MTB55N10ELT4 Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Motorola Semiconductor Products HUF76639S3S vs MTB55N10ELT4
IRL2910PBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG HUF76639S3S vs IRL2910PBF
IRL2910STRR Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier HUF76639S3S vs IRL2910STRR
IRL2910STRLPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier HUF76639S3S vs IRL2910STRLPBF
IRL2910SPBF Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG HUF76639S3S vs IRL2910SPBF
IRL2910 Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG HUF76639S3S vs IRL2910

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