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Part Details for IRL2910PBF by Infineon Technologies AG
Overview of IRL2910PBF by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRL2910PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
63J7744
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Newark | N Channel Mosfet, 100V, 55A, To-220Ab, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:55A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Msl:- Rohs Compliant: Yes |Infineon IRL2910PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.2900 / $2.6400 | Buy Now |
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DISTI #
70017085
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 0.026Ohm, ID 55A, TO-220AB, PD 200W, VGS +/-16V | Infineon IRL2910PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$1.9000 / $2.3800 | RFQ |
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Future Electronics | Single N-Channel 100 V 0.026 Ohm 140 nC HEXFET® Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 1 Container: Tube | 50Tube |
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$0.9200 / $1.0100 | Buy Now |
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Chip1Cloud | MOSFET N-CH 100V 55A TO-220AB | 1310 |
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RFQ | |
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DISTI #
8650942
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element14 Asia-Pacific | MOSFET, N, 100V, 48A, TO-220 RoHS: Compliant Min Qty: 1 Container: Each | 963 |
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$1.2935 / $2.3061 | Buy Now |
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DISTI #
8650942
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Farnell | MOSFET, N, 100V, 48A, TO-220 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Each | 0 |
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$1.2171 / $2.5795 | Buy Now |
Part Details for IRL2910PBF
IRL2910PBF CAD Models
IRL2910PBF Part Data Attributes:
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IRL2910PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRL2910PBF
Infineon Technologies AG
Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 520 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 190 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRL2910PBF
This table gives cross-reference parts and alternative options found for IRL2910PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRL2910PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRL2910 | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | IRL2910PBF vs IRL2910 |
| IRL2910 | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | IRL2910PBF vs IRL2910 |