Parametric results for: HUF76639S3S under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA LOW RESISTANCE 3 ULTRA-LOW RESISTANCE 2

10 hits Apply

DRAIN 10

10 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 10

10 hits Apply

DS Breakdown Voltage-Min (1)

100 V 10

10 hits Apply

Drain Current-Max (ID) (2)

50 A 3 51 A 7

Min (A) - Max (A)

10 hits Apply

Drain-source On Resistance-Max (2)

26 mΩ 3 27 mΩ 7

Min (Ω) - Max (Ω)

10 hits Apply

METAL-OXIDE SEMICONDUCTOR 10

10 hits Apply

TO-263AB 10

10 hits Apply

R-PSSO-G2 10

10 hits Apply

e0 2 e3 8

10 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 3 Intersil Corporation 2 onsemi 3 Rochester Electronics LLC 2

10 hits Apply

1 7 NOT APPLICABLE 1

10 hits Apply

Number of Elements (1)

1 10

10 hits Apply

Number of Terminals (1)

2 10

10 hits Apply

ENHANCEMENT MODE 10

10 hits Apply

175.0 °C 8

10 hits Apply

PLASTIC/EPOXY 10

10 hits Apply

RECTANGULAR 10

10 hits Apply

SMALL OUTLINE 10

10 hits Apply

Active 3 Obsolete 3 Transferred 4

10 hits Apply

Yes 6

10 hits Apply

245 3 260 3 NOT APPLICABLE 1

10 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 10

10 hits Apply

180 W 6 200 W 2

Min (W) - Max (W)

10 hits Apply

Surface Mount (1)

YES 10

10 hits Apply