Datasheets
HGTP12N60B3D by:

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-220AB ALTERNATE VERSION, 3 PIN

Part Details for HGTP12N60B3D by Fairchild Semiconductor Corporation

Overview of HGTP12N60B3D by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for HGTP12N60B3D

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HGTP12N60B3D Part Data Attributes:

HGTP12N60B3D Fairchild Semiconductor Corporation
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HGTP12N60B3D Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-220AB ALTERNATE VERSION, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 27 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 175 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 392 ns
Turn-on Time-Nom (ton) 45 ns

Alternate Parts for HGTP12N60B3D

This table gives cross-reference parts and alternative options found for HGTP12N60B3D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTP12N60B3D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTP12N60B3D 600V, N-CHANNEL IGBT, TO-220AB Intersil Corporation HGTP12N60B3D vs HGTP12N60B3D
Part Number Description Manufacturer Compare
HGT1S3N60B3S Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, Fairchild Semiconductor Corporation HGTP12N60B3D vs HGT1S3N60B3S
APT45GL100BN 45A, 1000V, N-CHANNEL IGBT, TO-247 Microsemi Corporation HGTP12N60B3D vs APT45GL100BN
IRG4BC20W-S Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 Infineon Technologies AG HGTP12N60B3D vs IRG4BC20W-S
HGTP20N60C3R Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel Fairchild Semiconductor Corporation HGTP12N60B3D vs HGTP20N60C3R
IRGPC50U Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC International Rectifier HGTP12N60B3D vs IRGPC50U
IRG4BC20FD-STRR Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 International Rectifier HGTP12N60B3D vs IRG4BC20FD-STRR
HGTD7N60C3S9A 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL onsemi HGTP12N60B3D vs HGTD7N60C3S9A
HGTP12N60C3 Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, Fairchild Semiconductor Corporation HGTP12N60B3D vs HGTP12N60C3
IRG4BC40K Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN Infineon Technologies AG HGTP12N60B3D vs IRG4BC40K
1MB10-120 Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN Fuji Electric Co Ltd HGTP12N60B3D vs 1MB10-120

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