HGTP12N60B3D vs 1MB10-120 feature comparison

HGTP12N60B3D Fairchild Semiconductor Corporation

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1MB10-120 Fuji Electric Co Ltd

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP COLLMER SEMICONDUCTOR INC
Part Package Code TO-220AB TO-3P
Package Description FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3
Pin Count 3 2
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 27 A 16 A
Collector-Emitter Voltage-Max 600 V 1200 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
Fall Time-Max (tf) 175 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JESD-30 Code R-PSFM-T3 R-PSIP-T3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 392 ns 1500 ns
Turn-on Time-Nom (ton) 45 ns 1200 ns
Base Number Matches 1 1

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