Part Details for HGTG24N60D1D by Harris Semiconductor
Overview of HGTG24N60D1D by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for HGTG24N60D1D
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-HGTG24N60D1D-ND
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DigiKey | UFS SERIES N-CHANNEL IGBT Min Qty: 29 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
9092 In Stock |
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$10.4000 | Buy Now |
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Rochester Electronics | 40A, 600V, RUGGED UFS SERIES N-Channel IGBT WITH ANTI-PARALLEL ULTRAFAST DIODE ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 9092 |
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$8.9300 / $10.5000 | Buy Now |
Part Details for HGTG24N60D1D
HGTG24N60D1D CAD Models
HGTG24N60D1D Part Data Attributes:
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HGTG24N60D1D
Harris Semiconductor
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Datasheet
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Compare Parts:
HGTG24N60D1D
Harris Semiconductor
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 40 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 600 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 25 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 900 ns | |
| Turn-off Time-Nom (toff) | 700 ns | |
| Turn-on Time-Nom (ton) | 100 ns | |
| VCEsat-Max | 2.3 V |
Alternate Parts for HGTG24N60D1D
This table gives cross-reference parts and alternative options found for HGTG24N60D1D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG24N60D1D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| GT15H101 | TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | HGTG24N60D1D vs GT15H101 |
| IRGBC30FD2 | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | HGTG24N60D1D vs IRGBC30FD2 |
| IRGPC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC | International Rectifier | HGTG24N60D1D vs IRGPC50U |
| HGTD7N60C3S9A | 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL | onsemi | HGTG24N60D1D vs HGTD7N60C3S9A |
| IRG4BC20W-STRLPBF | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | HGTG24N60D1D vs IRG4BC20W-STRLPBF |
| IXGH36N60A3D4 | Insulated Gate Bipolar Transistor, | Littelfuse Inc | HGTG24N60D1D vs IXGH36N60A3D4 |
| IRG4PH50UD | Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN | Infineon Technologies AG | HGTG24N60D1D vs IRG4PH50UD |
| HGTG10N120BND | 1200V, NPT IGBT, 450-TUBE | onsemi | HGTG24N60D1D vs HGTG10N120BND |
| HGTP12N60C3DR | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Fairchild Semiconductor Corporation | HGTG24N60D1D vs HGTP12N60C3DR |
| IXGH12N60BD1 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | HGTG24N60D1D vs IXGH12N60BD1 |