Part Details for HGTG20N60C3D by Fairchild Semiconductor Corporation
Overview of HGTG20N60C3D by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for HGTG20N60C3D
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 40 A, 600 V, N-CHANNEL IGBT, TO-247 | 12 |
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$7.3050 / $10.9575 | Buy Now |
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Chip1Cloud | 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | 3510 |
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RFQ |
Part Details for HGTG20N60C3D
HGTG20N60C3D CAD Models
HGTG20N60C3D Part Data Attributes:
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HGTG20N60C3D
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
HGTG20N60C3D
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-247,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Collector Current-Max (IC) | 45 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 210 ns | |
| Gate-Emitter Thr Voltage-Max | 6.3 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 164 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 28 ns | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 388 ns | |
| Turn-on Time-Nom (ton) | 52 ns |
Alternate Parts for HGTG20N60C3D
This table gives cross-reference parts and alternative options found for HGTG20N60C3D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG20N60C3D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGT1S3N60B3S | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-263AB, | Fairchild Semiconductor Corporation | HGTG20N60C3D vs HGT1S3N60B3S |
| APT45GL100BN | 45A, 1000V, N-CHANNEL IGBT, TO-247 | Microsemi Corporation | HGTG20N60C3D vs APT45GL100BN |
| IRG4BC20W-S | Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | Infineon Technologies AG | HGTG20N60C3D vs IRG4BC20W-S |
| HGTP20N60C3R | Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel | Fairchild Semiconductor Corporation | HGTG20N60C3D vs HGTP20N60C3R |
| IRGPC50U | Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC | International Rectifier | HGTG20N60C3D vs IRGPC50U |
| IRG4BC20FD-STRR | Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3 | International Rectifier | HGTG20N60C3D vs IRG4BC20FD-STRR |
| HGTD7N60C3S9A | 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL | onsemi | HGTG20N60C3D vs HGTD7N60C3S9A |
| HGTP12N60C3 | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB, | Fairchild Semiconductor Corporation | HGTG20N60C3D vs HGTP12N60C3 |
| IRG4BC40K | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | Infineon Technologies AG | HGTG20N60C3D vs IRG4BC40K |
| 1MB10-120 | Insulated Gate Bipolar Transistor, 16A I(C), 1200V V(BR)CES, N-Channel, TO-3P, 3 PIN | Fuji Electric Co Ltd | HGTG20N60C3D vs 1MB10-120 |