HGTG20N60C3D
vs
HGTD7N60C3S9A
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Obsolete
|
End Of Life
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
ONSEMI
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
LOW CONDUCTION LOSS
|
RC-IGBT
|
Collector Current-Max (IC) |
45 A
|
14 A
|
Collector-Emitter Voltage-Max |
600 V
|
600 V
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
Fall Time-Max (tf) |
210 ns
|
275 ns
|
Gate-Emitter Thr Voltage-Max |
6.3 V
|
6 V
|
Gate-Emitter Voltage-Max |
20 V
|
20 V
|
JEDEC-95 Code |
TO-247
|
TO-252AA
|
JESD-30 Code |
R-PSFM-T3
|
R-PSSO-G2
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
164 W
|
60 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Rise Time-Max (tr) |
28 ns
|
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
MATTE TIN
|
Matte Tin (Sn) - annealed
|
Terminal Form |
THROUGH-HOLE
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
MOTOR CONTROL
|
POWER CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
388 ns
|
490 ns
|
Turn-on Time-Nom (ton) |
52 ns
|
20 ns
|
Base Number Matches |
3
|
1
|
Pbfree Code |
|
Yes
|
Package Description |
|
TO-252AA, 3 PIN
|
Manufacturer Package Code |
|
369AS
|
Samacsys Manufacturer |
|
onsemi
|
Case Connection |
|
COLLECTOR
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Min |
|
-40 °C
|
Peak Reflow Temperature (Cel) |
|
260
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
Turn-off Time-Max (toff) |
|
675 ns
|
VCEsat-Max |
|
2 V
|
|
|
|
Compare HGTG20N60C3D with alternatives
Compare HGTD7N60C3S9A with alternatives