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HGTG12N60C3D by:

24A, 600V, N-CHANNEL IGBT, TO-247

Part Details for HGTG12N60C3D by Intersil Corporation

Overview of HGTG12N60C3D by Intersil Corporation

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Part Details for HGTG12N60C3D

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HGTG12N60C3D Part Data Attributes

HGTG12N60C3D Intersil Corporation
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HGTG12N60C3D Intersil Corporation 24A, 600V, N-CHANNEL IGBT, TO-247
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Case Connection COLLECTOR
Collector Current-Max (IC) 24 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 275000000000 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 540 ns
Turn-on Time-Nom (ton) 74 ns

Alternate Parts for HGTG12N60C3D

This table gives cross-reference parts and alternative options found for HGTG12N60C3D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTG12N60C3D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode, 450-TUBE onsemi HGTG12N60C3D vs HGTG12N60C3D
Part Number Description Manufacturer Compare
IRG4IBC30SPBF Insulated Gate Bipolar Transistor, 23.5A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 International Rectifier HGTG12N60C3D vs IRG4IBC30SPBF
HGTD2N120CNS9A 13A, 1200V, N-CHANNEL IGBT, TO-252AA Intersil Corporation HGTG12N60C3D vs HGTD2N120CNS9A
CT30SM-12 Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel Mitsubishi Electric HGTG12N60C3D vs CT30SM-12
HGTG5N120BND 21A, 1200V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTG12N60C3D vs HGTG5N120BND
HGT1S3N60B3DS 7A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGTG12N60C3D vs HGT1S3N60B3DS
HGT1S7N60C3DS 14A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGTG12N60C3D vs HGT1S7N60C3DS
HGTG12N60C3DR 24A, 600V, N-CHANNEL IGBT, TO-247 Intersil Corporation HGTG12N60C3D vs HGTG12N60C3DR
IRG4BC20FDPBF Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier HGTG12N60C3D vs IRG4BC20FDPBF
HGT1S20N60C3RS 40A, 600V, N-CHANNEL IGBT, TO-263AB Intersil Corporation HGTG12N60C3D vs HGT1S20N60C3RS
IRG4PC30KDPBF Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier HGTG12N60C3D vs IRG4PC30KDPBF

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