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Overview of HGT1S12N60C3S by Intersil Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 1 replacement )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for HGT1S12N60C3S by Intersil Corporation
Part Data Attributes for HGT1S12N60C3S by Intersil Corporation
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
INTERSIL CORP
|
Package Description
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Additional Feature
|
LOW CONDUCTION LOSS
|
Case Connection
|
COLLECTOR
|
Collector Current-Max (IC)
|
24 A
|
Collector-Emitter Voltage-Max
|
600 V
|
Configuration
|
SINGLE
|
Fall Time-Max (tf)
|
275000000000 ns
|
Gate-Emitter Thr Voltage-Max
|
6 V
|
Gate-Emitter Voltage-Max
|
20 V
|
JEDEC-95 Code
|
TO-263AB
|
JESD-30 Code
|
R-PSSO-G2
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
104 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
Tin/Lead (Sn/Pb)
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Transistor Application
|
MOTOR CONTROL
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Nom (toff)
|
480 ns
|
Turn-on Time-Nom (ton)
|
30 ns
|
Alternate Parts for HGT1S12N60C3S
This table gives cross-reference parts and alternative options found for HGT1S12N60C3S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGT1S12N60C3S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HGT1S12N60C3S | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB | Harris Semiconductor | HGT1S12N60C3S vs HGT1S12N60C3S |