Part Details for HAT2160H by Renesas Electronics Corporation
Overview of HAT2160H by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Industrial Automation
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| HAT2160H-EL-E | Renesas Electronics Corporation | Nch Single Power Mosfet 20V 60A 2.6Mohm Lfpak |
Part Details for HAT2160H
HAT2160H CAD Models
HAT2160H Part Data Attributes
|
|
HAT2160H
Renesas Electronics Corporation
Buy Now
Datasheet
|
Compare Parts:
HAT2160H
Renesas Electronics Corporation
60A, 20V, 0.0041ohm, N-CHANNEL, Si, POWER, MOSFET, LFPAK-5
|
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Package Description | LFPAK-5 | |
| Pin Count | 5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 60 A | |
| Drain-source On Resistance-Max | 0.0041 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for HAT2160H
This table gives cross-reference parts and alternative options found for HAT2160H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HAT2160H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC0908NSATMA1 | Power Field-Effect Transistor, 14A I(D), 34V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2160H vs BSC0908NSATMA1 |
| FDS7066N7 | Power Field-Effect Transistor, 23A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | HAT2160H vs FDS7066N7 |
| BSC057N03LSG | Power Field-Effect Transistor, 17A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2160H vs BSC057N03LSG |
| STL140N4LLF5 | N-channel 40 V, 0.00275 Ohm, 32 A, PowerFLAT(TM) 5x6 STripFET(TM) V Power MOSFET | STMicroelectronics | HAT2160H vs STL140N4LLF5 |
| FDS7088N3 | 21A, 30V, 0.004ohm, N-CHANNEL, Si, POWER, MOSFET, FLMP, SO-8 | Rochester Electronics LLC | HAT2160H vs FDS7088N3 |
| BSC059N03SG | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2160H vs BSC059N03SG |
| BSC059N03S | Power Field-Effect Transistor, 50A I(D), 30V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2160H vs BSC059N03S |
| BSC886N03LSG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2160H vs BSC886N03LSG |
| STL50NH3LL | 13A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, 6 X 5 MM, ROHS COMPLIANT, POWERFLAT-8 | STMicroelectronics | HAT2160H vs STL50NH3LL |
| BSC057N03LSGXT | Power Field-Effect Transistor, 17A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | HAT2160H vs BSC057N03LSGXT |