HAT2160H
vs
BSC059N03SG
feature comparison
| Part Life Cycle Code |
Not Recommended
|
Obsolete
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
LFPAK-5
|
SMALL OUTLINE, R-PDSO-F8
|
| Pin Count |
5
|
8
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
30 V
|
| Drain Current-Max (ID) |
60 A
|
17.5 A
|
| Drain-source On Resistance-Max |
0.0041 Ω
|
0.0086 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-G4
|
R-PDSO-F8
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
240 A
|
200 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
FLAT
|
| Terminal Position |
SINGLE
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
3
|
| Rohs Code |
|
Yes
|
| Additional Feature |
|
LOGIC LEVEL COMPATIBLE
|
| Avalanche Energy Rating (Eas) |
|
150 mJ
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
48 W
|
| Terminal Finish |
|
MATTE TIN
|
|
|
|
Compare HAT2160H with alternatives
Compare BSC059N03SG with alternatives