HAT2160H
vs
BSC057N03LSG
feature comparison
Part Life Cycle Code |
Not Recommended
|
Obsolete
|
Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
INFINEON TECHNOLOGIES AG
|
Package Description |
LFPAK-5
|
GREEN, PLASTIC, TDSON-8
|
Pin Count |
5
|
8
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
20 V
|
30 V
|
Drain Current-Max (ID) |
60 A
|
17 A
|
Drain-source On Resistance-Max |
0.0041 Ω
|
0.0085 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G4
|
R-PDSO-F8
|
Number of Elements |
1
|
1
|
Number of Terminals |
4
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
240 A
|
284 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
FLAT
|
Terminal Position |
SINGLE
|
DUAL
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
4
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
Samacsys Manufacturer |
|
Infineon
|
Additional Feature |
|
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
|
Avalanche Energy Rating (Eas) |
|
25 mJ
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Max |
|
150 °C
|
Peak Reflow Temperature (Cel) |
|
260
|
Power Dissipation-Max (Abs) |
|
45 W
|
Terminal Finish |
|
Tin (Sn)
|
Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
Compare HAT2160H with alternatives
Compare BSC057N03LSG with alternatives