Datasheets
HAT1021R by:

Power Field-Effect Transistor, 5.5A I(D), 20V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8

Part Details for HAT1021R by Hitachi Ltd

Overview of HAT1021R by Hitachi Ltd

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Price & Stock for HAT1021R

Part # Distributor Description Stock Price Buy
Chip1Cloud Silicon P Channel Power MOS FET High Speed Power Switching 31500
RFQ

Part Details for HAT1021R

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HAT1021R Part Data Attributes:

HAT1021R Hitachi Ltd
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HAT1021R Hitachi Ltd Power Field-Effect Transistor, 5.5A I(D), 20V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, FP-8DA, SOP-8
Part Life Cycle Code Transferred
Ihs Manufacturer HITACHI LTD
Part Package Code SOIC
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 44 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for HAT1021R

This table gives cross-reference parts and alternative options found for HAT1021R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HAT1021R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HAT1023R Power Field-Effect Transistor, 7A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Hitachi Ltd HAT1021R vs HAT1023R
STS5PF20V 5A, 20V, 0.1ohm, P-CHANNEL, Si, POWER, MOSFET, SO-8 STMicroelectronics HAT1021R vs STS5PF20V
FSS133 Power Field-Effect Transistor, 8A I(D), 20V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd HAT1021R vs FSS133
FSS131 Power Field-Effect Transistor, 6A I(D), 20V, 0.038ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd HAT1021R vs FSS131

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