Datasheets
FDR838P by:

Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8

Part Details for FDR838P by Fairchild Semiconductor Corporation

Overview of FDR838P by Fairchild Semiconductor Corporation

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Price & Stock for FDR838P

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 5 51705
  • 5 $1.1250
  • 19 $0.7313
  • 70 $0.4219
  • 239 $0.3600
  • 515 $0.3150
  • 1,224 $0.2925
$0.2925 / $1.1250 Buy Now
Quest Components 8000 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 41364
  • 1 $1.5000
  • 2,052 $0.3750
  • 4,001 $0.3300
$0.3300 / $1.5000 Buy Now
Chip1Cloud MOSFET P-CH 20V 8A SSOT-8 21900
RFQ

Part Details for FDR838P

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FDR838P Part Data Attributes:

FDR838P Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDR838P Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT
Package Description SUPERSOT-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.017 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.8 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDR838P

This table gives cross-reference parts and alternative options found for FDR838P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDR838P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDR838PD84Z Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 Fairchild Semiconductor Corporation FDR838P vs FDR838PD84Z
FDR838P_NL Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 Fairchild Semiconductor Corporation FDR838P vs FDR838P_NL
Part Number Description Manufacturer Compare
FDR838PD84Z Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 Fairchild Semiconductor Corporation FDR838P vs FDR838PD84Z
SI6423DQ-T1-GE3 TRANSISTOR 8200 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal Vishay Siliconix FDR838P vs SI6423DQ-T1-GE3
BSO200P03S Small Signal Field-Effect Transistor, 7.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-8 Infineon Technologies AG FDR838P vs BSO200P03S
NDS9435AF011 Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDR838P vs NDS9435AF011
BSO080P03S Small Signal Field-Effect Transistor, 12.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-8 Infineon Technologies AG FDR838P vs BSO080P03S
NDS9400A/L86Z 3400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET Texas Instruments FDR838P vs NDS9400A/L86Z
NDS9435AS62Z Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDR838P vs NDS9435AS62Z
FDS4435BZ_F085 Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Fairchild Semiconductor Corporation FDR838P vs FDS4435BZ_F085
SI6433BDQ-T1-GE3 Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 Vishay Intertechnologies FDR838P vs SI6433BDQ-T1-GE3
FDS6679Z 30V P-Channel PowerTrench® MOSFET, 8LD, JEDEC MS-012, .150"NARROW BODY, 2500/TAPE REEL Fairchild Semiconductor Corporation FDR838P vs FDS6679Z

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