Datasheets
SI6423DQ-T1-GE3 by:

TRANSISTOR 8200 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal

Part Details for SI6423DQ-T1-GE3 by Vishay Siliconix

Overview of SI6423DQ-T1-GE3 by Vishay Siliconix

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Price & Stock for SI6423DQ-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI6423DQ-T1-GE3CT-ND
DigiKey MOSFET P-CH 12V 8.2A 8TSSOP Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 3617
In Stock
  • 1 $2.5000
  • 10 $1.6070
  • 100 $1.0989
  • 500 $0.8815
  • 1,000 $0.8116
  • 3,000 $0.7229
  • 6,000 $0.7125
$0.7125 / $2.5000 Buy Now
New Advantage Corporation Single P-Channel 12 V 8.5 mOhm Surface Mount TrenchFET Power Mosfet - TSSOP-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 18000
  • 3,000 $0.8786
  • 18,000 $0.8200
$0.8200 / $0.8786 Buy Now

Part Details for SI6423DQ-T1-GE3

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SI6423DQ-T1-GE3 Part Data Attributes

SI6423DQ-T1-GE3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI6423DQ-T1-GE3 Vishay Siliconix TRANSISTOR 8200 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TSSOP
Package Description SMALL OUTLINE, R-PDSO-G8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 8.2 A
Drain-source On Resistance-Max 0.0085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI6423DQ-T1-GE3

This table gives cross-reference parts and alternative options found for SI6423DQ-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI6423DQ-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI6423DQ-T1-GE3 Small Signal Field-Effect Transistor, 8.2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8 Vishay Intertechnologies SI6423DQ-T1-GE3 vs SI6423DQ-T1-GE3
SI6423DQ-T1-E3 Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R Vishay Siliconix SI6423DQ-T1-GE3 vs SI6423DQ-T1-E3
Part Number Description Manufacturer Compare
NDS9405S62Z Small Signal Field-Effect Transistor, 4.3A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI6423DQ-T1-GE3 vs NDS9405S62Z
FDS4435AF011 Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI6423DQ-T1-GE3 vs FDS4435AF011
FDR844PD84Z Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 Fairchild Semiconductor Corporation SI6423DQ-T1-GE3 vs FDR844PD84Z
FDW254PZ Small Signal Field-Effect Transistor, 9.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 Fairchild Semiconductor Corporation SI6423DQ-T1-GE3 vs FDW254PZ
NDS9400A_NL Small Signal Field-Effect Transistor, 3.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Fairchild Semiconductor Corporation SI6423DQ-T1-GE3 vs NDS9400A_NL
FDS6675 Single P-Channel Logic Level PowerTrench™ MOSFET -30V, -11A, 14mΩ, SOIC-8, 2500-REEL onsemi SI6423DQ-T1-GE3 vs FDS6675
FDS6679Z_NL Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI6423DQ-T1-GE3 vs FDS6679Z_NL
SI6433BDQ-T1-GE3 TRANSISTOR 4000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal Vishay Siliconix SI6423DQ-T1-GE3 vs SI6433BDQ-T1-GE3
NDH832PD84Z Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 Fairchild Semiconductor Corporation SI6423DQ-T1-GE3 vs NDH832PD84Z
FDS6679 Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI6423DQ-T1-GE3 vs FDS6679

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