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Transistors / Power Field-Effect Transistors / FDD3670
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FDD3670 by:

100V N-Channel PowerTrench® MOSFET 34A, 32mΩ, 2500-REEL

Part Details for FDD3670 by onsemi

Overview of FDD3670 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for FDD3670

Part # Distributor Description Stock Price Buy
DISTI # 31Y1354
Newark Mosfet, N-Ch, 100V, 34A, To-252-3, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:34A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Onsemi FDD3670 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 1558
  • 1 $2.1400
  • 10 $1.9300
  • 25 $1.8500
  • 50 $1.7800
  • 100 $1.6900
  • 250 $1.6400
  • 500 $1.5200
  • 1,000 $1.3700
$1.3700 / $2.1400 Buy Now
DISTI # 27AC5671
Newark Dpak To252 Single Nch Rohs Compliant: Yes |Onsemi FDD3670 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,500 $1.5500
$1.5500 Buy Now
DISTI # 58K1433
Newark N Channel Mosfet, 100V, 34A, To-252, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:34A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:83W Rohs Compliant: Yes |Onsemi FDD3670 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.3800
  • 3,000 $1.3200
  • 6,000 $1.2300
  • 12,000 $1.1400
  • 18,000 $1.1000
  • 30,000 $1.0800
$1.0800 / $1.3800 Buy Now
DISTI # FDD3670CT-ND
DigiKey MOSFET N-CH 100V 34A TO252 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2462
In Stock
  • 1 $2.6000
  • 10 $2.1630
  • 100 $1.7217
  • 500 $1.4569
  • 1,000 $1.2361
  • 2,500 $1.1743
  • 5,000 $1.1302
$1.1302 / $2.6000 Buy Now
DISTI # FDD3670
Avnet Americas Trans MOSFET N-CH 100V 34A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD3670) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.2938
  • 5,000 $1.2589
  • 10,000 $1.2239
  • 15,000 $1.1889
  • 20,000 $1.1539
  • 25,000 $1.1190
  • 250,000 $1.0840
$1.0840 / $1.2938 Buy Now
DISTI # FDD3670
Avnet Americas Trans MOSFET N-CH 100V 34A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD3670) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.2938
  • 5,000 $1.2589
  • 10,000 $1.2239
  • 15,000 $1.1889
  • 20,000 $1.1539
  • 25,000 $1.1190
  • 250,000 $1.0840
$1.0840 / $1.2938 Buy Now
DISTI # FDD3670
Avnet Americas Trans MOSFET N-CH 100V 34A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD3670) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # FDD3670
Avnet Americas Trans MOSFET N-CH 100V 34A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD3670) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.2938
  • 5,000 $1.2589
  • 10,000 $1.2239
  • 15,000 $1.1889
  • 20,000 $1.1539
  • 25,000 $1.1190
  • 250,000 $1.0840
$1.0840 / $1.2938 Buy Now
DISTI # 512-FDD3670
Mouser Electronics MOSFET 100V NCh PowerTrench RoHS: Compliant 12396
  • 1 $1.6300
  • 10 $1.2900
  • 100 $1.1000
  • 2,500 $1.0900
  • 5,000 $1.0600
$1.0600 / $1.6300 Buy Now
Future Electronics N-Channel 100 V 32 mOhm Surface Mount PowerTrench Mosfet TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $1.1100
$1.1100 Buy Now
Rochester Electronics Power Field-Effect Transistor, 34A, 100V, 0.032ohm, N-Channel, MOSFET, TO-252 RoHS: Compliant Status: Active Min Qty: 1 267
  • 1 $1.2700
  • 25 $1.2500
  • 100 $1.2000
  • 500 $1.1500
  • 1,000 $1.0800
$1.0800 / $1.2700 Buy Now
DISTI # FDD3670
Avnet Americas Trans MOSFET N-CH 100V 34A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD3670) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.2938
  • 5,000 $1.2589
  • 10,000 $1.2239
  • 15,000 $1.1889
  • 20,000 $1.1539
  • 25,000 $1.1190
  • 250,000 $1.0840
$1.0840 / $1.2938 Buy Now
DISTI # FDD3670
Avnet Americas Trans MOSFET N-CH 100V 34A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD3670) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.2938
  • 5,000 $1.2589
  • 10,000 $1.2239
  • 15,000 $1.1889
  • 20,000 $1.1539
  • 25,000 $1.1190
  • 250,000 $1.0840
$1.0840 / $1.2938 Buy Now
DISTI # FDD3670
Avnet Americas Trans MOSFET N-CH 100V 34A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD3670) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.2938
  • 5,000 $1.2589
  • 10,000 $1.2239
  • 15,000 $1.1889
  • 20,000 $1.1539
  • 25,000 $1.1190
  • 250,000 $1.0840
$1.0840 / $1.2938 Buy Now
DISTI # FDD3670
Avnet Americas Trans MOSFET N-CH 100V 34A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD3670) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # FDD3670
Avnet Silica Trans MOSFET N-CH 100V 34A 3-Pin(2+Tab) TO-252AA T/R (Alt: FDD3670) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDD3670
EBV Elektronik Trans MOSFET N-CH 100V 34A 3-Pin(2+Tab) TO-252AA T/R (Alt: FDD3670) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
LCSC 100V 34A 32m7.3A10V 4V250uA 1PCSNChannel TO-252-2 MOSFETs ROHS 193
  • 1 $1.8353
  • 10 $1.6831
  • 30 $1.5891
  • 100 $1.4921
  • 500 $1.4473
  • 1,000 $1.4279
$1.4279 / $1.8353 Buy Now

Part Details for FDD3670

FDD3670 CAD Models

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FDD3670 Part Data Attributes:

Parametric Data
FDD3670 onsemi
Buy Now Datasheet
Compare Parts:
FDD3670 onsemi 100V N-Channel PowerTrench® MOSFET 34A, 32mΩ, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description DPAK-3
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 51 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 360 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 34 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDD3670

This table gives cross-reference parts and alternative options found for FDD3670. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD3670, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDD3670 34A, 100V, 0.032ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC FDD3670 vs FDD3670
Part Number Description Manufacturer Compare
IRF5M3710PBF Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG FDD3670 vs IRF5M3710PBF
IPD35N10S3L-26 Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG FDD3670 vs IPD35N10S3L-26
IRF540Z Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 Infineon Technologies AG FDD3670 vs IRF540Z
IPD35N10S3L26ATMA1 Power Field-Effect Transistor, 35A I(D), 100V, 0.0319ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 Infineon Technologies AG FDD3670 vs IPD35N10S3L26ATMA1
SUD35N10-26P-T4GE3 Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3/2 Vishay Intertechnologies FDD3670 vs SUD35N10-26P-T4GE3
AP50T10GP-HF TRANSISTOR 38 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power Advanced Power Electronics Corp FDD3670 vs AP50T10GP-HF
IPB35N10S3L26ATMA1 Power Field-Effect Transistor, 35A I(D), 100V, 0.0322ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN Infineon Technologies AG FDD3670 vs IPB35N10S3L26ATMA1
IRF5M3710SCV Power Field-Effect Transistor, 35A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG FDD3670 vs IRF5M3710SCV

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